IXFR180N10 Description
+150 V V V V A A A A mJ J V/ns ISOPLUS 247TM G D Isolated back surface G = Gate S = Source Patent pending D = Drain.
IXFR180N10 Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<25pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier