* z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 720 mΩ Easy to mount Space savings High power density DS99593E(07/06) www
IXFT14N80P Datasheet (243.47 KB)
IXFT14N80P
IXYS Corporation
243.47 KB
Polarhv hiperfet power mosfet.
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV .
📁 Related Datasheet
IXFT14N100 HiPerFET Power MOSFETs (IXYS)
IXFT140N10P N-Channel Power MOSFET (IXYS Corporation)
IXFT140N20X3HV Power MOSFET (IXYS)
IXFT100N30X3HV N-Channel Power MOSFET (IXYS)
IXFT10N100 Power MOSFETs (IXYS)
IXFT120N15P Polar MOSFETs (IXYS Corporation)
IXFT12N100 Power MOSFETs (IXYS)
IXFT12N100F Power MOSFET (IXYS Corporation)
IXFT12N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching (IXYS Corporation)
IXFT13N100 Power MOSFETs (IXYS)
