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IXFT23N80Q Datasheet HiPerFET Power MOSFETs Q-Class

Manufacturer: IXYS (now Littelfuse)

Overview: HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque Mounting Force TO-247 TO-268 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C IXFH23N80Q IXFT23N80Q VDSS = 800 V = 23 A ID25 RDS(on) = 0.42 Ω trr ≤ 250 ns Maximum Ratings 800 800 ± 30 ± 40 23 92 23 45 1.5 5 500 -55 ... +150 150 -55 ...

Download the IXFT23N80Q datasheet PDF. This datasheet also includes the IXFH23N80Q variant, as both parts are published together in a single manufacturer document.

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Key Features

  • z z z 1.13/10 Nm/lb. in. z 20120/4.527 N/lb 6 4 g g z z IXYS advanced low Qg process International standard packages Epoxy meets UL 94 V-0 flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA µA mA Ω z Easy to mount Space savings High power density VDSS VGS(th) IGS.

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