* z z International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3m
IXFT340N075T2 Datasheet (198.02 KB)
IXFT340N075T2
IXYS Corporation
198.02 KB
Power mosfet.
Advance Technical Information TrenchT2TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH340N075T2 IXFT3.
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