Overview: PolarTM HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 12A 1.05Ω 300ns PLUS220 (IXFV) G D S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 12 24 6 750 15 463 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g PLUS220SMD (IXFV_S) G S D (Tab) TO-247 (IXFH) G D S D (Tab) G = Gate S = Source D = Drain Tab = Drain Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) TO-247 PLUS220 types 300 260 1.13/10 11..65/2.5..14.
