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IXFV110N25T - Trench Gate Power HiperFET

Key Features

  • z z International standard packages Avalanche rated www. DataSheet4U. net Advantages Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 3mA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 4.5 ± 200 V V nA.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information Trench Gate Power HiperFET N-Channel Enhancement Mode Avalanche Rated IXFV110N25T IXFV110N25TS VDSS ID25 RDS(on) = 250V = 110A ≤ 24mΩ Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 110 75 300 25 1 10 694 -55 ... +150 150 -55 ... +150 V V V V A A A A J V/ns W °C °C °C °C °C N/lb. g PLUS220 (IXFV) G D S (TAB) PLUS220SMD (IXFV_S) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062 in.