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IXFV12N100P - Polar HiPerFET Power MOSFETs

Download the IXFV12N100P datasheet PDF. This datasheet also covers the IXFH12N100P variant, as both devices belong to the same polar hiperfet power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 1mA VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 100 V V nA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH12N100P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFV12N100PS Polar HiPerFET Power MOSFETs
IXFV110N25T Trench Gate Power HiperFET
IXFV110N25TS Trench Gate Power HiperFET
IXFV14N80P PolarHV HiPerFET Power MOSFET
IXFV14N80PS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS(on) trr = = ≤ ≤ 1000V 12A 1.05Ω 300ns PLUS220 (IXFV) G D S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ± 30 ± 40 12 24 6 750 15 463 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb.