IXFV12N100PS Datasheet | IXYS

Features z z z z Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1m A VDS = VGS, ID = 1m A VGS = ± 30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 ± 100 V V n A Applications z z z z High Power Density Easy to Mount Space Savings 20 μA 1.0 m A 1.05 Ω z z z z VGS = 10V, ID = 0.5 - ID25, Note 1 Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99920B(03/11) ..net © 2011 IXYS CORPORATION, All Rights Reserved IXFH12N100P IXFV12N100P IXFV12N100PS Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs RGi Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CS (TO-247&PLUS220) 0.25 VGS = 10V, VDS = 0.5 - VDSS, ID = 0.5 - ID25 Resistive Switching Times VGS = 10V, VDS = 0.5 - VDSS, ID = 0.5 - ID25 RG = 2Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 - ID25, Note 1 Gate Input Resistance Characteristic Values Min. Typ. Max. 4.8 8.8 1.9 4080 246 40 30 25 60 36 80 24 35 S Ω p F p F p F ns ns ns ns n C n C n C 0.27 °C/W °C/W PLUS220 Outline Source-Drain Diode TJ = 25°C Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 6A, -di/dt = 100A/μs VR = 100V, VGS = 0V Characteristic Values Min. Typ. Max. 12 48 1.5 A A V TO-247 Outline 300 ns 0.8 7.9 μC 1 2 3 ∅P Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. e PLUS220SMD Outline Terminals: 1 - Gate 3 - Source - Drain Dim. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1...