* z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 I
IXFV26N50P Datasheet (243.62 KB)
IXFV26N50P
IXYS Corporation
243.62 KB
Avalanche rated fast instrinsic diode.
PolarHVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet www.DataSheet4U.com IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID.
📁 Related Datasheet
IXFV26N50PS Avalanche Rated Fast Instrinsic Diode (IXYS Corporation)
IXFV26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated (IXYS Corporation)
IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated (IXYS Corporation)
IXFV20N80P PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFV20N80PS PolarHV HiPerFET Power MOSFET (IXYS Corporation)
IXFV22N50P PolarHV HiPerFET Power MOSFET (IXYS)
IXFV22N50PS PolarHV HiPerFET Power MOSFET (IXYS)
IXFV22N60P Power MOSFETs (IXYS)
IXFV22N60PS Power MOSFETs (IXYS)
IXFV110N10P PolarHT HiPerFET Power MOSFET (IXYS)
