IXFV26N50PS Datasheet | IXYS

Polar HVTM Power MOSFET Avalanche Rated Fast Instrinsic Diode Preliminary Data Sheet .. IXFH 26N50P IXFV 26N50P IXFV 26N50PS VDSS ID25 trr RDS(on) = = ≤ ≤ 500 V 26 A 230 mΩ 200 ns Symbol VDSS VDGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuos Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 500 500 ± 30 ± 40 26 78 26 40 1.0 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C °C °C TO-247 (IXFH) VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV_S) 1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque Mounting force (TO-247) (PLUS220SMD) 300 260 G S G = Gate S = Source D (TAB) D = Drain TAB = Drain 1.13/10 Nm/lb.in. 11..65/2.5..15 6 5 N/lb g g TO-3P PLUS220 & PLUS220SMD Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ±100 25 250 230 V V n A µA µA mΩ Features z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99276A(09/05)...