IXFV26N60PS Datasheet | IXYS

Advance Advance Technical Technical Information Information .. Polar HVTM Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) 600 V 26 A 270 mΩ 200 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 26 65 26 40 1.2 10 V V V V A A A m J J V/ns TO-3P (IXFQ) D (TAB) TO-268 (IXFT) D (TAB) PLUS220 (IXFV) 460 -55 ... +150 150 -55 ... +150 W °C °C °C °C °C D (TAB) 1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque (TO-3P&TO-247) Mounting force (PLUS220) TO-3P TO-248 TO-268 PLUS220 & PLUS220SMD 300 250 PLUS220SMD (IXFV_S) 1.13/10 Nm/lb.in. 11..65/2.5..15 5.5 6.0 5.0 4.0 N/lb g g g g G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 m A VGS = ±30 V, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 2.5 5.0 ±100 25 250 270 V V n A µA µA mΩ Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights...