IXFV26N50P - Avalanche Rated Fast Instrinsic Diode

Product Overview

IXYS Corporation

Part number	IXFV26N50P
Manufacturer	IXYS Corporation
File Size	243.62 KB
Description	Avalanche Rated Fast Instrinsic Diode
Datasheet	IXFV26N50P Datasheet
Note	This datasheet PDF includes multiple part numbers: IXFV26N50P, IXFH26N50P. Please refer to the document for exact specifications by model.
Additional preview pages of the IXFV26N50P datasheet.

z International standard packages z Fast intrinsic diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved DS99276A(09/05) IXFH 26N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 16 26 3600 VGS = 0 V, VDS = 25 V, f = 1 MHz 37.

📁 Similar Datasheet

Other Datasheets by IXYS Corporation

IXFV26N50PS - Avalanche Rated Fast Instrinsic Diode
IXFV26N60P - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFV26N60PS - N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFV20N80P - PolarHV HiPerFET Power MOSFET
IXFV20N80PS - PolarHV HiPerFET Power MOSFET
IXFV110N25T - Trench Gate Power HiperFET

Published: Jul 25, 2008 |