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PolarTM Power MOSFET HiperFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFK220N15P IXFX220N15P
VDSS ID25
RDS(on) trr
= = ≤ ≤
150V 220A 9mΩ 200ns
TO-264 (IXFK)
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Leads Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 150 150 ±20 ±30 220 160 600 50 3 20 1250 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g
G D S
Tab
PLUS247 (IXFX)
G
D
S
Tab D = Drain Tab = Drain
G = Gate S = Source
Features
z z z z
1.6mm (0.062 in.
IXFX220N15P Datasheet
