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IXYS Corporation

IXFX220N15P Datasheet Preview

IXFX220N15P Datasheet

Polar Power MOSFET HiperFET

No Preview Available !

PolarTM Power MOSFET
HiperFETTM
IXFK220N15P
IXFX220N15P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
VDSS =
ID25 =
RDS(on)
trr
150V
220A
9mΩ
200ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C (Chip Capability)
Leads Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force (PLUS247)
TO-264
PLUS247
Maximum Ratings
150
150
V
V
±20 V
±30 V
220 A
160 A
600 A
50 A
3J
20 V/ns
1250
W
-55 ... +175
175
-55 ... +175
300
260
1.13/10
20..120 /4.5..27
10
6
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
150 V
2.5 4.5 V
±200 nA
50 μA
1.5 mA
9 mΩ
G
D
S
PLUS247 (IXFX)
Tab
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z Avalanche Rated
z Low Package Inductance
z Fast Intrinsic Rectifier
z Low RDS(on) and QG
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC and DC Motor Drives
z Uninterrupted Power Supplies
z High Speed Power Switching
Applications
w©w20w11.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100017A(01/11)




IXYS Corporation

IXFX220N15P Datasheet Preview

IXFX220N15P Datasheet

Polar Power MOSFET HiperFET

No Preview Available !

Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
50 85
S
15.4
3040
35
nF
pF
pF
35 ns
28 ns
56 ns
17 ns
162 nC
58 nC
56 nC
0.12 °C/W
0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 110A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 110A, -di/dt = 150A/μs
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
220 A
800 A
1.4 V
1.32
18.8
200 ns
μC
A
IXFK220N15P
IXFX220N15P
TO-264 Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e 5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
PLUS247TM Outline
Note 1: Pulse test, t 300μs, duty cycle, d 2%.
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e 5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537


Part Number IXFX220N15P
Description Polar Power MOSFET HiperFET
Maker IXYS Corporation
Total Page 5 Pages
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