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IXFX26N90 - Power MOSFET

Download the IXFX26N90 datasheet PDF (IXFK25N90 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Features

  • z International standard packages z Avalanche Rated z Low package inductance z Low RDS(ON) HDMOS Process z Fast intrinsic diode Advantages z Easy to mount z Space savings z High power density.

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Note: The manufacturer provides a single datasheet file (IXFK25N90_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK25N90 IXFX25N90 IXFK26N90 IXFX26N90 Symbol VDSS VDGR VGSS VGSM ID25 IDM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (IXFK) Mounting force (IXFX) TO-264 TO-247 Maximum Ratings 900 V 900 V ± 20 V ± 30 V 25N90 25 A 25N90 100 A 26N90 26 A 26N90 104 A 25N90 25 A 26N90 26 A 3 J 5 V/ns 560 -55 ... +150 150 -55 ... +150 300 260 1.13/10 20..120 /4.5..
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