IXGH12N100AU1 Description
+150 °C 1.13/10 Nm/lb.in. 6 g 300 °C Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min.
IXGH12N100AU1 Key Features
- International standard packages
- IGBT with antiparallel FRED in one
- HDMOSTM process
- Low VCE(sat)
- for minimum on-state conduction losses
- MOS Gate turn-on
- drive simplicity
- Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I