• Part: IXGH12N60BD1
  • Manufacturer: IXYS
  • Size: 69.87 KB
Download IXGH12N60BD1 Datasheet PDF
IXGH12N60BD1 page 2
Page 2

IXGH12N60BD1 Description

+150 V V V V A A A A W °C °C °C TO-247 AD C (TAB) G C E G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque with screw M3 Mounting torque with screw M3.5 0.45/4 Nm/lb.in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10.

IXGH12N60BD1 Key Features

  • Moderate frequency IGBT
  • New generation HDMOSTM process
  • International standard package JEDEC TO-247
  • High peak current handling capability and antiparallel diode in one package