* International standard package JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low VCE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM l l G C E
IXGH25N100AU1 Datasheet (315.17 KB)
IXGH25N100AU1
IXYS Corporation
315.17 KB
High speed igbt with diode.
Preliminary data Low VCE(sat) High speed IGBT with Diode VCES IXGH25N100U1 1000 V IXGH25N100AU1 1000 V IC25 50 A 50 A VCE(sat) 3.5 V 4.0 V TO-247.
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