* l International standard package JEDEC TO-247 AD l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l MOS Gate turn-on - drive simplicity Symbol BVCES V GE(th) I CES IGES VCE(sat) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXGH25N120 Datasheet (45.89 KB)
IXGH25N120
IXYS
45.89 KB
High speed igbt.
Low V CE(sat) High speed IGBT IXGH 25 N120 IXGH 25 N120A VCES 1200 V 1200 V IC25 50 A 50 A VCE(sat) 3V 4V Symbol Test Conditions VCES VCGR VGES.
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