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Ultra-Low VCE(sat) IGBT with Diode
IXGH 28N60B IXGT 28N60B
VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V
Preliminary data
Symbol www.DataSheet4U.com VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C
Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in. °C g g
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G C E G = Gate, E = Emitter, TAB C = Collector, TAB = Collector
Mounting torque (M3) TO-247
1.
IXGH28N60B Datasheet
