IXGH28N60BD1 Description
+150 V V V V A A A A W °C °C °C °C g.
IXGH28N60BD1 Key Features
- International standard packages
- IGBT and anti-parallel FRED in one package
- Low VCE(sat)
- for minimum on-state conduction losses
- MOS Gate turn-on
- drive simplicity
- Part: IXGH28N60BD1
- Manufacturer: IXYS
- Size: 57.31 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXGH28N60B | Ultra-low V Ce(sat) Igbt |
| IXGH28N120B | High Voltage IGBT |
| IXGH28N140B3H1 | 1400V IGBT |
| IXGH28N30 | HiPerFAST IGBT |
| IXGH28N30A | HiPerFAST IGBT |