IXGH28N60BD1 - Low VCE(sat) IGBT

Features

International standard packages.
IGBT and anti-parallel FRED in one package.
Low VCE(sat) - for minimum on-state conduction losses.
MOS Gate turn-on - drive simplicity.

IXYS Corporation

Datasheet Details

Part number	IXGH28N60BD1
Manufacturer	IXYS Corporation
File Size	57.31 KB
Description	Low VCE(sat) IGBT
Datasheet	IXGH28N60BD1 Datasheet
Additional preview pages of the IXGH28N60BD1 datasheet.

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Full PDF Text Transcription

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Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ...

Published: Apr 5, 2005 |