IXGH28N60BD1 Datasheet | IXYS

Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 m H TC = 25°C Maximum Ratings 600 600 ±20 ±30 40 28 80 ICM = 56 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C °C g g Features - International standard packages - IGBT and anti-parallel FRED in one package - Low VCE(sat) - for minimum on-state conduction losses - MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 200 3 ±100 2.0 V V m A m A n A V - - - - - AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies G = Gate, E = Emitter, C = Collector, TAB = Collector G C E TAB TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) 1.13/10 Nm/lb.in. 300 6 4 BVCES VGE(th) ICES IGES VCE(sat) IC IC = 750 m A, VGE = 0 V = 250 m A, VCE = VGE Advantages - Space savings (two devices in one package) - Easy to mount with 1 screw (isolated mounting screw hole) - Reduces assembly time and cost - High power density VCE = 0.8 - VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and...