IXGH28N30 Description
HiPerFASTTM IGBT IXGH 28N30 IXGT 28N30 VCES IC25 VCE(sat)typ tfi(typ) = 300 V = 56 A = 1.6 V = 180 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW.
IXGH28N30 Key Features
- International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD
- High current handling capability
- Newest generation HDMOSTM process
- MOS Gate turn-on
- drive simplicity