IXGH28N30B Description
+150 300 260 V V V V A A A A W °C °C °C °C °C TO-247 AD (IXGH) G C E TO-268 (IXGT) G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXGH28N30B Key Features
- International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD
- High current handling capability
- Newest generation HDMOSTM process
- MOS Gate turn-on
- drive simplicity