* International standard package miniBLOC
* Aluminium nitride isolation - high power dissipation
* Isolation voltage 3000 V~
* Very high current, fast switching IGBT
* Low VCE(sat) - for minimum on-state conduction losses
* MOS Gate turn-on - drive sim
IXGN200N60B Datasheet (67.94 KB)
IXGN200N60B
IXYS Corporation
67.94 KB
Igbt.
Advanced Technical Information HiPerFASTTM IGBT IXGN 200N60B VCES IC25 VCE(sat) = 600 V = 200 A = 2.1 V E Symbol VCES VCGR VGES VGEM IC25 IC90 I.
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