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IXGT16N170AH1 - High Voltage IGBT

Features

  • High Blocking Voltage.
  • International Standard Packages.
  • Low Conduction Losses.
  • Anti-Parallel Sonic Diode.
  • High Blocking Voltage.
  • High Currect Handling Capability Advantages.
  • Low Gate Drive Requirement.
  • High Power Density.

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High Voltage IGBT w/ Sonic Diode IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 VCES IC90 VCE(sat) tfi(typ) = 1700V = 11A £ 5.0V = 35ns Symbol VCES VCGR VGES VGEM IC25 IC90 IF90 ICM SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 25C TC = 90C TC = 90C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 10 Clamped Inductive Load VGE = 15V, VCE = 1200V, TJ = 125°C RG = 22, Non Repetitive TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1700 V 1700 V 20 V 30 V 16 A 11 A 17 A 40 A ICM = 40 A 0.8 • VCES 10 μs 190 -55 ... +150 150 -55 ... +150 300 260 1.13/10 4 6 W C C C °C °C Nm/lb.
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