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IXGX50N60C2D1 - High Speed IGBT

Features

  • Very high frequency IGBT and anti-parallel FRED in one package.
  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

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www.DataSheet4U.com HiPerFASTTM IGBT with Diode IXGK 50N60C2D1 IXGX 50N60C2D1 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi(typ) Preliminary Data Sheet = 600 V = 75 A = 2.5 V = 48 ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient Maximum Ratings 600 V 600 V ±20 V ±30 V TC = 25°C (limited by leads) TC = 110°C TC = 110°C TC = 25°C, 1 ms 75 A 50 A 48 A 300 A VGE = 15 V, TVJ = 125°C, RG = 10 Ω DataSheet4UI.CcMo=m100 A Clamped inductive load @ VCE ≤ 600 V TC = 25°C 480 W -55 ... +150 °C 150 °C -55 ... +150 °C Mounting torque, TO-264 1.13/10 Nm/lb.in. TO-264 PLUS247 10 g 6 g Maximum lead temperature for soldering 1.6 mm (0.
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