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IXGX60N60B2D1 - HiPerFAST IGBT

Features

  • Square RBSOA.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.
  • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM.

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www.DataSheet4U.com Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE(sat) tfi(typ) = 600 V = 75 A < 1.8 V = 100 ns Symbol V CES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 75 60 300 ICM = 150 V V V V A A A A TO-264 AA (IXGK) (TAB) C E G PLUS247 (IXGX) (TAB) DataSheet4U.com 500 -55 ... +150 150 -55 ...
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