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IXYS Corporation

IXSH24N60U1 Datasheet Preview

IXSH24N60U1 Datasheet

HiPerFASTTM IGBT with Diode

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HiPerFASTTM IGBT with Diode
Short Circuit SOA Capability
IXSH 24N60U1
IXSH 24N60AU1
V
CES
600 V
600 V
I
C25
48 A
48 A
V
CE(sat)
2.2 V
2.7 V
Symbol
Test Conditions
Maximum Ratings TO-247 AD
VCES
VCGR
TJ = 25°C to 150°C600
TJ = 25°C to 150°C; RGE = 1 MW
V
600
VGES
V
GEM
Continuous
Transient
±20
±30
IC25 TC = 25°C
I
C90
T
C
=
90°C
ICM TC = 25°C, 1 ms
48
24
96
SSOA
VGE= 15 V, TVJ = 125°C, RG = 10 W
(RBSOA) Clamped inductive load, L = 100 mH
ICM = 48
@ 0.8 VCES
tSC
(SCSOA)
VGE= 15 V, VCE = 360 V, TJ = 125°C,
R
G
=
82
W,
non-repetitive
10
PC TC = 25°C
150
TJ -55 ... +150
TJM 150
Tstg -55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
V
V
V
A
A
A
A
ms
W
°C
°C
°C
°C
°C
Md
Weight
Mounting torque, TO-247
TO-247 AD
1.13/10 Nm/lb.in.
6g
G
CE
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
• International standard package
JEDEC TO-247 AD
• High frequency IGBT and anti-parallel
FRED in one package
• 2nd generation HDMOSTM process
• Low VCE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM
Applications
Symbol
BVCES
VGE(th)
I
CES
IGES
VCE(sat)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 750 mA, VGE = 0 V
IC = 1.5 mA, VCE = VGE
600
3.5
V = 0.8 • V
CE CES
VGE = 0 V
T
J
=
25°C
TJ = 125°C
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
IXSH 24N60U1
IXSH 24N60AU1
V
6.5 V
500 mA
8 mA
±100 nA
2.2 V
2.7 V
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• Suitable for surface mounting
• Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
• Reduces assembly time and cost
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92820I (7/00)
1-2




IXYS Corporation

IXSH24N60U1 Datasheet Preview

IXSH24N60U1 Datasheet

HiPerFASTTM IGBT with Diode

No Preview Available !

IXSH 24N60U1
IXSH 24N60AU1
Symbol
g
fs
IC(on)
Cies
Coes
Cres
Qg
Q
ge
Qgc
td(on)
tri
td(off)
tfi
E
off
td(on)
tri
E
on
td(off)
tfi
E
off
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
I = I ; V = 10 V,
9 13
C C90 CE
Pulse test, t £ 300 ms, duty cycle £ 2 %
S
VGE = 15 V, VCE = 10 V
VCE = 25 V, VGE = 0 V, f = 1 MHz
65
1800
200
45
A
pF
pF
pF
I = I , V = 15 V, V = 0.5 V
C C90 GE
CE CES
75 90 nC
20 30 nC
35 50 nC
Inductive
load,
T
J
=
25°C
IC = IC90, VGE = 15 V, L = 100 mH,
V
CE
=
0.8
V,
CES
R
G
=
R
off
=
10
W
Remarks: Switching times may
increase for V (Clamp) > 0.8 • V ,
CE CES
higher TJ or increased RG
24N60U1
24N60AU1
24N60AU1
100
200
450
500
275
2
ns
ns
ns
ns
ns
mJ
Inductive load, TJ = 125°C
I
C
=
I,
C90
V
GE
=
15
V,
L
=
100
mH
VCE = 0.8 VCES, RG = Roff = 10 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
24N60U1
24N60AU1
24N60U1
24N60AU1
100
200
1.8
475
600
450
4
3
0.25
ns
ns
mJ
ns
ns
ns
mJ
mJ
0.83 K/W
K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V I = I , V = 0 V,
F F C90 GE
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.6 V
IRM IF = IC90, VGE = 0 V, -diF/dt = 240 A/ms
10 15 A
trr VR = 360 V
TJ = 125°C 150
ns
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C 35
50 ns
RthJC
1 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number IXSH24N60U1
Description HiPerFASTTM IGBT with Diode
Maker IXYS Corporation
Total Page 2 Pages
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