°C Ultra-low On Resistance
°C °C
Unclamped Inductive Switching (UIS) rated
Low package inductance
°C - easy to drive and to protect
°C 175 ° C Operating Temperature
g Advantages Easy to mount Space savings High power density
Symbol
Test Conditions
(TJ = 25° C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 100 µA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS RDS(on)
VDS = VDSS
VGS = 0 V
TJ = 150° C
VGS = 10 V, ID = 25 A, Note 1
Characteristic Values Min.
Full PDF Text Transcription for IXTA110N055T7 (Reference)
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IXTA110N055T7. For precise diagrams, and layout, please refer to the original PDF.
Preliminary Technical Information TrenchMVTM Power MOSFET IXTA110N055T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS V...
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valanche Rated VDSS = ID25 = RDS(on) ≤ 55 110 7.0 V A mΩ Symbol VDSS VDGR VGSM ID25 IDM IAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤175° C, RG = 5 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Maximum Ratings TO-263 (7-lead) (IXTA..7) 55 V 55 V ± 20 110 300 25 750 3 V A A A mJ V/ns 1 7 Pin-out:1 - Gate 2, 3 - Source 4 - NC (cut) 5,6,7 - Source TAB (8) - Drain (TAB) 230 -55 ... +175 175 -55 ...
IXTA110N055T7 Datasheet
