• Part: IXTH30N50
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 59.23 KB
Download IXTH30N50 Datasheet PDF
IXTH30N50 page 2
Page 2

Datasheet Summary

MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V ID (cont) = 30 A RDS(on) = 0.17 Ω Symbol V DSS V DGR V VGSM ID25 I PD TJ TJM Tstg TL Md Weight Test Conditions = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C = 25°C, pulse width limited by T JM TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque Maximum Ratings TO-247 AD ±20 ±30 -55 ... +150 °C °C -55 ......