IXTH30N50 mosfet equivalent, power mosfet.
z
International standard package JEDEC TO-247 AD z Low RDS (on) HDMOSTM process z Rugged polysilicon gate cell structure z Fast switching times
Symbol
Test Conditions
.
z
V DSS VGS(th) IGSS IDSS R DS(on)
VGS = 0 V, ID = 5 mA BVDSS temperature coefficient VDS = VGS, ID = 250 µA VGS(th) t.
Image gallery
Download