| Part Number | IXTH30N50 Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview | MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V ID (cont) = 30 A RDS(on) = 0.17 Ω Symbol V DSS V DGR V GS VGSM ID25 I DM PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C. z International standard package JEDEC TO-247 AD z Low R HDMOSTM process DS (on) z Rugged polysilicon gate cell structure z Fast switching times Symbol V DSS VGS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V = 0 V, I . |
IXTH30N50 Datasheet and Specifications PDF
The IXTH30N50 is a Power MOSFET.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IXTH30N50 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 170mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot.
*Drain Source Voltage- : VDSS= 500V(Min) *Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switch-Mode and Resonant-Mode Power Supplies *DC-DC Converters. |