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Preliminary Technical Information
Power MOSFET with Extended FBSOA
N-Channel Enhancement Mode
IXTH30N50L IXTQ30N50L IXTT30N50L
D O DD
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
TC = 25°C
1.6mm (0.063in) from case for 10s Plastic body for 10s Mounting torque (TO-247, TO-3P) TO-247 TO-3P TO-268
RGi
G O ww
O
S
Maximum Ratings
500
V
500
V
±20
V
±30
V
30
A
60
A
30
A
50
mJ
1.5
J
400
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6.0
g
5.5
g
5.
IXTH30N50L Datasheet
