IXTH30N50P Overview
Key Features
- Drain Source Voltage- : VDSS= 500V(Min)
- Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max)
- Fast Switching
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXTH30N50P |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 332.12 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IXTH30N50P | IXYS | PolarHV Power MOSFET |
| IXTH30N50 | IXYS | Power MOSFET |
| IXTH30N50L | IXYS | Power MOSFET |
| IXTH30N50L2 | IXYS | Power MOSFET |