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MegaMOSTMFET
N-Channel Enhancement Mode
IXTH 30N50
VDSS = 500 V
ID (cont) =
30 A
RDS(on) = 0.17 Ω
Symbol
V DSS
V DGR V
GS
VGSM ID25 I
DM
PD TJ TJM Tstg TL Md Weight
Test Conditions
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque
Maximum Ratings TO-247 AD
500
V
500
V
±20
V
±30
V
30
A
120
A
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
1.13/10 Nm/lb.in.
IXTH30N50 Datasheet
