IXTH30N50 Description
MegaMOSTMFET N-Channel Enhancement Mode IXTH 30N50 VDSS = 500 V ID (cont) = 30 A RDS(on) = 0.17 Ω Symbol V DSS V DGR V GS VGSM ID25 I DM PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25°C to 150°C TJ = 25°C to 150°C; +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain.
IXTH30N50 Key Features
- VDSS VGS = 0 V