| Part Number | IXTH30N50P Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview | PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS V= DSS ID25 = ≤ RDS(on) 500 30 200 V A mΩ TO-247 AD (IXTH) Symbol . l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99415E(04/06) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(o. |
IXTH30N50P Datasheet and Specifications PDF
The IXTH30N50P is a PolarHV Power MOSFET.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IXTH30N50P Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 200mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot.
*Drain Source Voltage- : VDSS= 500V(Min) *Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) *Fast Switching *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃). |