IXTH7P50 mosfet equivalent, p-channel mosfet.
* International standard package
* Low R HDMOS process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
TM DS (on)
JEDEC T.
VDSS VGS(th) IGSS IDSS RDS(on)
V GS = 0 V, ID = -250 µA BVDSS Temperature Coefficient V DS = VGS, ID = -250 µA VGS(th).
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