Datasheet Summary
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Preliminary Technical Information
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated
IXTP 10N60PM
VDSS ID25
RDS(on)
= 600 V = 5 A ≤ 740 mΩ
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
Maximum Ratings 600 600 ±30 ±40 5 30 10 20 500 10 50 -55 ... +150 150 -55 ... +150 V V V V
OVERMOLDED TO-220 (IXTP...M) OUTLINE
G A A A mJ mJ V/ns W °C °C °C °C...
