Datasheet4U Logo Datasheet4U.com

IXTP10N60PM - PolarHV Power MOSFET

Features

  • z z 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10 s Mounting torque 300 260 z z 1.13/10 Nm/lb. in. 4 g Plastic overmolded tab for electrical isolation International standard package Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 100μA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ =.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP10N60PM N-Channel MOSFET INCHANGE
IXTP10N60P N-Channel MOSFET INCHANGE
IXTP10N60P Power MOSFET IXYS
IXTP100N04T2 Power MOSFET IXYS
IXTP100N04T2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXTP110N055P PolarHT Power MOSFET
IXTP110N055T Power MOSFET
IXTP130N10T Power MOSFET
IXTP152N085T Power MOSFET
IXTP160N075T Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Preliminary Technical Information PolarHVTM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated IXTP 10N60PM VDSS ID25 RDS(on) = 600 V = 5 A ≤ 740 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 5 30 10 20 500 10 50 -55 ... +150 150 -55 ... +150 V V V V OVERMOLDED TO-220 (IXTP...M) OUTLINE G A A A mJ mJ V/ns W °C °C °C °C °C Isolated Tab DS G = Gate S = Source D = Drain Features z z 1.6 mm (0.062 in.
Published: |