IXTV200N10TS Datasheet | IXYS

Trench MVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTV200N10T IXTV200N10TS VDSS ID25 RDS(on) = 100V = 200A ≤ 5.5mΩ PLUS220 (IXFV) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL FC Weight 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting force (PLUS220) PLUS220 types Test Conditions T J = 25°C to 175°C T J = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C Maximum Ratings 100 100 ± 30 200 75 500 40 1.5 550 -55 ... +175 175 -55 ... +175 300 260 11.65 / 2.5..14.6 4 V V V A A A A J W °C °C °C °C °C N/lb. g Features International standard packages 175°C Operating Temperature Avalanche Rated Low RDS(on) Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary - Side Switch High Current Switching Applications G = Gate S = Source D = Drain TAB = Drain G S G D S D (TAB) PLUS220SMD (IXFV_S) D (TAB) Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C VGS = 10V, ID = 50A, Notes 1, 2 Characteristic Values Min. Typ. Max. 100 2.5 4.5 V V ±200 n A 5 250 4.5 μA μA 5.5 mΩ © 2008 IXYS CORPORATION, All rights reserved DS99714A(10/08) IXTV200N10T IXTV200N10TS Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CH PLUS220 0.21 VGS = 10V, VDS = 0.5 - VDSS, ID = 50A Resistive Switching Times VGS = 10V, VDS = 0.5 - VDSS, ID = 50A RG = 3.3Ω (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 60 96 9400 1087 140 35 31 45 34 152 47 47 S p F p F p F ns ns ns ns n C n C n C 0.27 ° C/W °C/W PLUS220 (IXTV) Outline Source-Drain Diode Symbol Test Conditions...