NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873
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space and weight savings reduced protection circuits.
Full PDF Text Transcription for MDI150-12A4 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MDI150-12A4. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 IGBT Modules Short Circuit SOA Capability Square RBSOA MII 3 IC25 = 180 A VCES = 1200 V VCE(sat) typ. = 2.2 ...
MDI150-12A4 Datasheet
