• Part: MDI400-12E4
  • Description: IGBT Module
  • Manufacturer: IXYS
  • Size: 110.71 KB
Download MDI400-12E4 Datasheet PDF
IXYS
MDI400-12E4
MDI400-12E4 is IGBT Module manufactured by IXYS.
Features IGBTs T1-T2 Symbol VCES VGES IC25 IC80 ICM VCEK t SC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C non repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 420 300 450 VCES 10 1700 V V A A A µs W - IGBT - low saturation voltage - positive temperature coefficient - fast switching - short tail current for optimized performance in resonant circuits - Hi Per FREDTM diodes - fast and soft reverse recovery - low operating forward voltage - low leakage current - Package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - kelvin emitter terminal for easy drive - isolated ceramic base plate Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 TVJ = 25°C TVJ = 125°C 0.8 3.5 2.8 6.5 3.3 600 150 60 680 50 36 30 17 2.25 0.15 V V V m A m A n A ns ns ns ns m J m J n F µC 0.08 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon Rth JC Rth JH IC = 300 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 10 m A; VGE = VCE VCE = VCES; VGE = 0 V; VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 300 A VGE = ±15 V; RG = 4.7 Ω - drives - AC - DC - power supplies - rectifiers with power factor correction and recuperation capability - UPS VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 300 A (per IGBT) with heatsink pound © 2002 IXYS All rights reserved 1-2 MII 400-12E4 MID 400-12E4 MDI 400-12E4 Free wheeling diodes D1-D2 Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 450 290 A A Dimensions in mm (1 mm = 0.0394") Symbol VF .. Conditions IF = 300 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 225 A; di F/dt = -2000 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) with heatsink pound Characteristic Values...