MDI150-12A4 Datasheet | IXYS

Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 k Hz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 q q q q q q q q q q q q Advantages W q °C °C V~ V~ Nm lb.in. Nm lb.in. mm mm m/s2 g oz. q space and weight savings reduced protection circuits 50/60 Hz, RMS t = 1 min t=1s IISOL £ 1 m A Insulating material: Al2O3 Mounting torque (module) (teminals) 4000 4800 2.25-2.75 20-25 2.5-3.7 22-33 10 9.6 50 250 8.8 Typical Applications q q Md q q AC and DC motor control AC servo and robot drives power supplies welding inverters d S d A a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Data according to a single IGBT/FRED unless otherwise stated. © 2000 IXYS All rights reserved 1-4 MII 150-12 A4 MID 150-12 A4 MDI 150-12 A4 Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 11 6.5 V V Dimensions in mm (1 mm = 0.0394") V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff Rth JC Rth JS VGE = 0 V IC = 4 m A, VCE = VGE VCE = VCES VCE = 0 V, VGE = ±20 V IC = 100 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 7.5 m A m A ±400 n A 2.2 6.6 1 0.44 100 70 500 70 15 11.5 0.33 V n F n F n F ns ns ns ns m J m J Inductive load, TJ = 125°C IC = 100 A, VGE = ±15 V VCE = 600 V, RG = 10 W with heatsink pound 0.17 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.3 1.8 2.5 1.9 200 130 80 200 0.66 V V A A A ns 0.33 K/W K/W Conduction VF IF IRM trr Rth JC Rth JS IF = 100 A, VGE = 0 V, IF = 100 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 80°C IF = 100 A, VGE = 0 V, -di F/dt = 800...