2SD1816L Silicon NPN Power Transistor

Inchange

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min). Collector Power Dissipation : PC= 2 W(Max). Minimum Lot-to-Lot variations fo.

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Datasheet Specifications

Part number: 2SD1816L
Manufacturer: Inchange
File Size: 235.17 KB
Datasheet: 2SD1816L-Inchange.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissi

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2SD1816L Silicon NPN Power Transistor Inchange

Inchange 2SD1816L-like datasheet

2SD5702