Datasheet4U Logo Datasheet4U.com

2SD1816L - Silicon NPN Power Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Collector Power Dissipation : PC= 2 W(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD1816 Silicon NPN Power Transistor Inchange Semiconductor
2SD1816 PNP/NPN Transistor Sanyo Semicon Device
2SD1816 NPN TRANSISTOR UTC
2SD1816 Bipolar Transistor ON Semiconductor
2SD1816 NPN Epitaxial Planar Silicon Transistor SeCoS

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD1815 NPN Transistor
2SD1817 NPN Transistor
2SD1803 TO-252 NPN Transistor
2SD1804 NPN Transistor
2SD1804-T NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Collector Power Dissipation : PC= 2 W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 2 W 150 ℃ Tstg Storage Temperature -40~150 ℃ 2SD1816L isc website：www.iscsemi.
Published: |