2SD1816 Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 200mA V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;.
