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2SD1816 - Silicon NPN Power Transistor

General Description

Excellent linearity of hFE Small and slim package facilitating compactness of sets Low collector-to-emitter saturation voltage High fT Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APP

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1816 DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·High fT ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 120 V 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction