Inchange Semiconductor 2SD1817
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD1817 |
|---|---|
| Datasheet | 2SD1817 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC current gain●Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
●Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2.0A
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Relay drivers,High speed inverters,converters and other general high-current switching applicationsABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 80 V 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： 1 isc & iscsemi is registered trademark isc NPN Epitaxial Planar Silicon TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA VBE(sat) Base-Emitter Saturation Voltage IC= 2A; I...