Datasheet Summary
isc NPN Epitaxial Planar Silicon Transistor
DESCRIPTION
- High DC current gain
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- Low Collector Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 2.0A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Relay drivers,High speed inverters,converters and other general high-current switching...
