2SD1817 Description
·High DC current gain ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector Saturation Voltage- : 1 isc & iscsemi is registered trademark isc NPN Epitaxial Planar Silicon Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;.