| Part number | 2SD1816L |
|---|---|
| Datasheet | 2SD1816L-Inchange.pdf |
| File Size | 235.17 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Collector Power Dissipation : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1816 | Silicon NPN Power Transistor | Inchange Semiconductor |
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2SD1816 | PNP/NPN Transistor | Sanyo Semicon Device |
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2SD1816 | NPN TRANSISTOR | UTC |
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2SD1816 | Bipolar Transistor | ON Semiconductor |
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2SD1816 | NPN Epitaxial Planar Silicon Transistor | SeCoS |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1815 | NPN Transistor |
| 2SD1817 | NPN Transistor |
| 2SD1803 | TO-252 NPN Transistor |
| 2SD1804 | NPN Transistor |
| 2SD1804-T | NPN Transistor |
| 2SD1804L-T | NPN Transistor |
| 2SD1825 | NPN Transistor |
| 2SD1826 | NPN Transistor |
| 2SD1827 | NPN Transistor |
| 2SD1828 | NPN Transistor |
