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2SD1816L - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) Collector Power Dissipation : PC= 2 W(Max) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Collector Power Dissipation : PC= 2 W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 4 A 2 W 150 ℃ Tstg Storage Temperature -40~150 ℃ 2SD1816L isc website：www.iscsemi.