Download 2SD1816L Datasheet PDF
2SD1816L page 2
Page 2

2SD1816L Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Collector Power Dissipation : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA;.