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2N3053 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.

General Description

·Maximun SOA Curve ·High gain-bandwidth Product : fT = 100MHz ·Low Leakage Current APPLICATIONS ·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO VCER Collector-Emitter Voltage Collector – Emitter Sustaining Voltage 40 50 V V VCEX Collector - Emiiter Voltage 60 V VEBO IC Emitter-Base Voltage Collector Current-Continuous 5V 0.7 A Collector Power Dissipation@TA=25℃ 1 PC Collector Power Dissipation@TC=25℃ 5 TJ Junction Temperature 200 W W ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a Rth j-c Thermal Resistance,Junction to Ambient Thermal Resistance,Junction to Case MAX 175 35 UNIT ℃/W ℃/W isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification 2N3053 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA ;

IE=0 V(BR)EBO Emitter-Base Breakdown Voltage VCEO(SUS) Collector – Emitter Voltage VCER(SUS) Collector – Emitter Voltage VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC=0.1mA ;

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