900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Inchange Semiconductor

2N3053 Datasheet Preview

2N3053 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N3053
DESCRIPTION
·Maximun SOA Curve
·High gain-bandwidth Product
: fT = 100MHz
·Low Leakage Current
APPLICATIONS
·Designed for audio amplifiers ,controlled amplifiers ,ower supplies, power oscillators and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60 V
VCEO
VCER
Collector-Emitter Voltage
Collector – Emitter Sustaining Voltage
40
50
V
V
VCEX
Collector - Emiiter Voltage
60 V
VEBO
IC
Emitter-Base Voltage
Collector Current-Continuous
5V
0.7 A
Collector Power Dissipation@TA=25
1
PC
Collector Power Dissipation@TC=25
5
TJ Junction Temperature
200
W
W
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
Thermal Resistance,Junction to Ambient
Thermal Resistance,Junction to Case
MAX
175
35
UNIT
/W
/W
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark
1




Inchange Semiconductor

2N3053 Datasheet Preview

2N3053 Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N3053
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC=0.1mA ; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
VCEO(SUS) Collector – Emitter Voltage
VCER(SUS) Collector – Emitter Voltage
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
IC=0.1mA ; IE=0
IB = 100mA ;IB = 0
RBE = 10W IC= 100mA
IC=150mA; IB= 15mA
IC= 150mA ; IB=15mA
VCE=30V; IB=0
IEBO Emitter Cutoff Current
VEB= 4V; IC=0
h21E Static Forward Current Transfer ratio IC= 0.15A ; VCE= 10V
fT Current Gain-Bandwidth Product
IC= 50mA ; VCE= 10V;f=20MHz
C22b Output Capacitance
VCB = 10V f =1MHz
C11b Input Capacitance
VCB = 10V f =1MHz
MIN MAX UNIT
60 V
5V
40 V
50 V
1.4 V
1.7 V
0.25 uA
0.25 uA
50 250
100 MHz
15 pF
80 pF
isc websitewww.iscsemi.cn
isc & iscsemi is registered trademark
2


Part Number 2N3053
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
PDF Download

2N3053 Datasheet PDF






Similar Datasheet

1 2N3053 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR
Seme LAB
2 2N3053 COMPLEMENTARY SILICON TRANSISTORS
Micro Electronics
3 2N3053 Silicon NPN Planar Transistor
ETC
4 2N3053 Silicon NPN Power Transistor
Inchange Semiconductor
5 2N3053 Small Signal Transistors
Central
6 2N3053 NPN SILICON PLANAR TRANSISTOR
CDIL
7 2N3053 GENERAL PURPOSE TRANSISTOR
Motorola
8 2N3053A Silicon NPN Planar Transistor
ETC
9 2N3053A Trans GP BJT NPN 60V 0.7A 3-Pin TO-39 Box
New Jersey Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy