Datasheet Details
| Part number | 2N3055H |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 31.70 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N3055H Download (PDF) |
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| Part number | 2N3055H |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 31.70 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N3055H Download (PDF) |
|
|
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·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 15 A IB Base Current 7A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.52 UNIT ℃/W isc Website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3055H ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=200mA ;
IB=0 VCER(SUS) Collector-Emitter Sustaining Voltage IC=200mA ;
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N3055H | 15A Power Transistors | Multicomp |
 |
2N3055H | Silicon Power Transistor | USHA |
 |
2N3055H | Power Transistor | Seme LAB |
 |
2N3055HV | NPN Power Transistor | CDIL |
 |
2N3055HV | NPN POWER TRANSISTOR | TRANSYS Electronics Limited |
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