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2N3173 Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·All semelab hermetically sealed products,can be processed
in accordance with the requirements of BS,CECC,and
JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation@TC=25
75
W
TJ, Tstg
Operating and Storage Junction
Temperature Range
-65~+150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.67 /W
2N3173
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2N3173 Datasheet Preview

2N3173 Datasheet

Silicon PNP Power Transistor

No Preview Available !

isc Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.14A
ICEO
Collector Cutoff Current
VCE= -80V; IB=0
IEBO
Emitter Cutoff Current
VEB= -10V; IC=0
hFE
DC Current Gain
IC= -1A ; VCE= -3V
2N3173
MIN MAX UNIT
-0.75 V
-1.8
V
-0.1 mA
-0.1 mA
12
36
Notice
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N3173
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
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