Download 2N3863 Datasheet PDF
Inchange Semiconductor
2N3863
DESCRIPTION - Excellent Safe Operating Area - Low Collector-Emitter Saturation Voltage - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS - Designed for medium-speed switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX...