2N5686 Overview
·High DC Current Gain-hFE=15~60@IC = 25A ·Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications. 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Produc.



