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2N5686 - NPN Transistor

Download the 2N5686 datasheet PDF. This datasheet also covers the 2N5684 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ăHigh Current Capability - IC Continuous = 50 Amperes.
  • ăDC Current Gain - hFE = 15ā-ā60 @ IC = 25 Adc.
  • ăLow Collector-Emitter Saturation Voltage - ąVCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc.
  • ăPb-Free Packages are Available.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N5684_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5686
Manufacturer onsemi
File Size 114.22 KB
Description NPN Transistor
Datasheet download datasheet 2N5686 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N5684 (PNP), 2N5686 (NPN) High-Current Complementary Silicon Power Transistors These packages are designed for use in high-power amplifier and switching circuit applications. Features •ăHigh Current Capability - IC Continuous = 50 Amperes •ăDC Current Gain - hFE = 15ā-ā60 @ IC = 25 Adc •ăLow Collector-Emitter Saturation Voltage - ąVCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc •ăPb-Free Packages are Available* MAXIMUM RATINGS (Note 1) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Symbol VCEO VCB VEB IC IB PD Value 80 80 5.0 50 15 300 1.